The VP0106N3-P002-G is a P-channel MOSFET from Microchip, packaged in a TO-92 case. It can handle a continuous drain current of -250mA and has a drain to source breakdown voltage of -60V. The device has a drain to source resistance of 8 ohms and a gate to source voltage of 20V. It is rated for a power dissipation of 1W.
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| Package/Case | TO-92 |
| Continuous Drain Current (ID) | -250mA |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 8R |
| Gate to Source Voltage (Vgs) | 20V |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Resistance | 8R |
| RoHS | Compliant |
