The VP2106N3-P014-G is a P-channel MOSFET packaged in a TO-92 case. It can handle a continuous drain current of -250mA and has a drain to source breakdown voltage of -60V. The device has a gate to source voltage rating of 20V and a power dissipation of 740mW. It is available in a tape and reel packaging with 2000 units per package.
PackageTO-92
Resistance12R
PolarityP-CHANNEL
Power740mW
Quick Jump:
Technical Specifications
Microchip VP2106N3-P014-G technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | -250mA |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 12R |
| Gate to Source Voltage (Vgs) | 20V |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 740mW |
| Resistance | 12R |
Compliance
| RoHS | Compliant |
Datasheet
Microchip VP2106N3-P014-G Datasheet
Download the complete datasheet for Microchip VP2106N3-P014-G to view detailed technical specifications.
No datasheet is available for this part.