The VP2206N3-G P014 is a P-channel FET with a continuous drain current of 53A and a drain to source voltage of -60V. It has a drain to source resistance of 1.5 ohms and a gate to source voltage of 20V. The device is packaged in a TO-92-3 package and is rated for operation between -55°C and 150°C. It can handle a maximum power dissipation of 1W.
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Microchip VP2206N3-G P014 technical specifications.
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 53A |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | -60V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Turn-Off Delay Time | 16ns |
| RoHS | Not Compliant |
