The VP2206N3-GP002 is a P-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of -640mA and a drain to source breakdown voltage of -60V. The device is packaged in a TO-92-3 package and is available in quantities of 2000. The VP2206N3-GP002 is suitable for applications requiring a high level of reliability and performance.
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Microchip VP2206N3-GP002 technical specifications.
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | -640mA |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | -60V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Length | 5.21mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 4ns |
| Weight | 0.016oz |
| Width | 4.19mm |
| RoHS | Not Compliant |
