The VP2450N3-GP003 is a P-channel MOSFET with a maximum drain to source breakdown voltage of -500V and a continuous drain current of -100mA. It features a drain to source resistance of 35 ohms and a gate to source voltage of 20V. The device is packaged in a TO-92-3 package and is rated for operation over a temperature range of -55°C to 150°C. The maximum power dissipation is 1W.
Microchip VP2450N3-GP003 technical specifications.
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | -100mA |
| Drain to Source Breakdown Voltage | -500V |
| Drain to Source Resistance | 35R |
| Drain to Source Voltage (Vdss) | -500V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Length | 5.21mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.016oz |
| Width | 4.19mm |
| RoHS | Compliant |
No datasheet is available for this part.
