256Mbyte DDR SDRAM 200SODIMM module featuring 266 MHz clock rate and 0.75 ns access time. This unbuffered small outline dual in-line memory module utilizes 32Mx64 organization with 8 chips per module, each configured as 32Mx8 TSOP. Operating at a typical 2.5V supply voltage, it offers a 64-bit data bus width and 2 CAS latency. The non-lead-frame SMT package measures 67.56mm (Max) length, 3.81mm (Max) width, and 31.75mm height, designed for socket mounting.
PackageUSODIMM
MountingSocket
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Technical Specifications
Microchip W3EG6432S263D4 technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
DIM
Package/Case
USODIMM
Package Description
Unbuffered Small Outline Dual In Line Memory Module
Lead Shape
No Lead
Pin Count
200
PCB
200
Package Length (mm)
67.56(Max)
Package Width (mm)
3.81(Max)
Package Height (mm)
31.75
Mounting
Socket
Main Category
DRAM Module
Total Density
256Mbyte
Module Type
200SODIMM
Maximum Access Time
0.75ns
Maximum Clock Rate
266MHz
Chip Density
256Mbit
Subcategory
DDR SDRAM
Data Bus Width
64bit
Number of Chip per Module
8
Organization
32Mx64
Chip Package Type
TSOP
Typical Operating Supply Voltage
2.5V
Maximum Operating Current
2800mA
Min Operating Supply Voltage
2.3V
Max Operating Supply Voltage
2.7V
Min Operating Temperature
0°C
Max Operating Temperature
70°C
Chip Configuration
32Mx8
ECC Support
No
CAS Latency
2
Compliance
Cage Code
60991
EU RoHS
No
HTS Code
8473301140
Schedule B
8473300002
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Microchip W3EG6432S263D4 Datasheet
Download the complete datasheet for Microchip W3EG6432S263D4 to view detailed technical specifications.
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