512Mbyte DDR SDRAM DRAM Module, 184-pin UDIMM, featuring 64Mx64 organization with 8 chips per module. Operates at a maximum clock rate of 200 MHz with a 64-bit data bus width and CAS Latency of 2. This unbuffered dual in-line memory module utilizes TSOP chip packaging and supports a typical operating supply voltage of 2.5V, with a range of 2.3V to 2.7V. Designed for socket mounting, it offers a maximum access time of 0.75 ns and operates within a temperature range of 0°C to 70°C.
PackageUDIMM
MountingSocket
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Technical Specifications
Microchip W3EG6464S202JD3 technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
DIM
Package/Case
UDIMM
Package Description
Unbuffered Dual In Line Memory Module
Lead Shape
No Lead
Pin Count
184
PCB
184
Package Length (mm)
133.48(Max)
Package Width (mm)
2.54(Max)
Package Height (mm)
30.48(Max)
Pin Pitch (mm)
1.27
Mounting
Socket
Main Category
DRAM Module
Total Density
512Mbyte
Module Type
184DIMM
Maximum Access Time
0.75ns
Maximum Clock Rate
200MHz
Chip Density
512Mbit
Subcategory
DDR SDRAM
Data Bus Width
64bit
Number of Chip per Module
8
Organization
64Mx64
Chip Package Type
TSOP
Typical Operating Supply Voltage
2.5V
Maximum Operating Current
3840mA
Min Operating Supply Voltage
2.3V
Max Operating Supply Voltage
2.7V
Min Operating Temperature
0°C
Max Operating Temperature
70°C
Chip Configuration
64Mx8
ECC Support
No
CAS Latency
2
Compliance
Cage Code
60991
EU RoHS
No
HTS Code
8473301140
Schedule B
8473300002
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Microchip W3EG6464S202JD3 Datasheet
Download the complete datasheet for Microchip W3EG6464S202JD3 to view detailed technical specifications.
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