512Mbyte DDR SDRAM DRAM Module, 184-pin UDIMM, featuring 64Mx64 organization with 8 chips per module. Operates at a maximum clock rate of 200 MHz with a 64-bit data bus width and CAS Latency of 2. This unbuffered dual in-line memory module utilizes TSOP chip packaging and supports a typical operating supply voltage of 2.5V, with a range of 2.3V to 2.7V. Designed for socket mounting, it offers a maximum access time of 0.75 ns and operates within a temperature range of 0°C to 70°C.
Microchip W3EG6464S202JD3 technical specifications.
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | DIM |
| Package/Case | UDIMM |
| Package Description | Unbuffered Dual In Line Memory Module |
| Lead Shape | No Lead |
| Pin Count | 184 |
| PCB | 184 |
| Package Length (mm) | 133.48(Max) |
| Package Width (mm) | 2.54(Max) |
| Package Height (mm) | 30.48(Max) |
| Pin Pitch (mm) | 1.27 |
| Mounting | Socket |
| Main Category | DRAM Module |
| Total Density | 512Mbyte |
| Module Type | 184DIMM |
| Maximum Access Time | 0.75ns |
| Maximum Clock Rate | 200MHz |
| Chip Density | 512Mbit |
| Subcategory | DDR SDRAM |
| Data Bus Width | 64bit |
| Number of Chip per Module | 8 |
| Organization | 64Mx64 |
| Chip Package Type | TSOP |
| Typical Operating Supply Voltage | 2.5V |
| Maximum Operating Current | 3840mA |
| Min Operating Supply Voltage | 2.3V |
| Max Operating Supply Voltage | 2.7V |
| Min Operating Temperature | 0°C |
| Max Operating Temperature | 70°C |
| Chip Configuration | 64Mx8 |
| ECC Support | No |
| CAS Latency | 2 |
| Cage Code | 60991 |
| EU RoHS | No |
| HTS Code | 8473301140 |
| Schedule B | 8473300002 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Microchip W3EG6464S202JD3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.