512Mbyte DDR SDRAM DRAM Module, 200-pin USODIMM, operating at 400 MHz with a 64-bit data bus width. Features 8 x 512Mbit TSOP chips, organized as 32Mx64x2, with a CAS Latency of 3 and a maximum access time of 0.65 ns. This unbuffered small outline dual in-line memory module supports dual ranks and operates from a 2.3V to 2.7V supply, with a typical voltage of 2.5V. Designed for socket mounting, it has a non-lead-frame SMT basic package type and a maximum package length of 67.75mm.
PackageUSODIMM
MountingSocket
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Technical Specifications
Microchip WV3EG232M64STSU403D4SG technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
DIM
Package/Case
USODIMM
Package Description
Unbuffered Small Outline Dual In Line Memory Module
Lead Shape
No Lead
Pin Count
200
PCB
200
Package Length (mm)
67.75(Max)
Package Width (mm)
3.8(Max)
Package Height (mm)
31.9(Max)
Mounting
Socket
Main Category
DRAM Module
Total Density
512Mbyte
Module Type
200SODIMM
Maximum Access Time
0.65ns
Maximum Clock Rate
400MHz
Chip Density
512Mbit
Subcategory
DDR SDRAM
Data Bus Width
64bit
Number of Chip per Module
8
Organization
32Mx64x2
Chip Package Type
TSOP
Typical Operating Supply Voltage
2.5V
Maximum Operating Current
1620mA
Min Operating Supply Voltage
2.3V
Max Operating Supply Voltage
2.7V
Min Operating Temperature
0°C
Max Operating Temperature
70°C
Chip Configuration
32Mx16
ECC Support
No
Number of Ranks
Dual
CAS Latency
3
Compliance
Cage Code
60991
EU RoHS
Yes
HTS Code
8473301140
Schedule B
8473300002
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2002/95/EC
Datasheet
Microchip WV3EG232M64STSU403D4SG Datasheet
Download the complete datasheet for Microchip WV3EG232M64STSU403D4SG to view detailed technical specifications.
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