512Mbyte DDR SDRAM DRAM Module, 200-pin USODIMM, operating at 400 MHz with a 64-bit data bus width. Features 8 x 512Mbit TSOP chips, organized as 32Mx64x2, with a CAS Latency of 3 and a maximum access time of 0.65 ns. This unbuffered small outline dual in-line memory module supports dual ranks and operates from a 2.3V to 2.7V supply, with a typical voltage of 2.5V. Designed for socket mounting, it has a non-lead-frame SMT basic package type and a maximum package length of 67.75mm.
Microchip WV3EG232M64STSU403D4SG technical specifications.
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | DIM |
| Package/Case | USODIMM |
| Package Description | Unbuffered Small Outline Dual In Line Memory Module |
| Lead Shape | No Lead |
| Pin Count | 200 |
| PCB | 200 |
| Package Length (mm) | 67.75(Max) |
| Package Width (mm) | 3.8(Max) |
| Package Height (mm) | 31.9(Max) |
| Mounting | Socket |
| Main Category | DRAM Module |
| Total Density | 512Mbyte |
| Module Type | 200SODIMM |
| Maximum Access Time | 0.65ns |
| Maximum Clock Rate | 400MHz |
| Chip Density | 512Mbit |
| Subcategory | DDR SDRAM |
| Data Bus Width | 64bit |
| Number of Chip per Module | 8 |
| Organization | 32Mx64x2 |
| Chip Package Type | TSOP |
| Typical Operating Supply Voltage | 2.5V |
| Maximum Operating Current | 1620mA |
| Min Operating Supply Voltage | 2.3V |
| Max Operating Supply Voltage | 2.7V |
| Min Operating Temperature | 0°C |
| Max Operating Temperature | 70°C |
| Chip Configuration | 32Mx16 |
| ECC Support | No |
| Number of Ranks | Dual |
| CAS Latency | 3 |
| Cage Code | 60991 |
| EU RoHS | Yes |
| HTS Code | 8473301140 |
| Schedule B | 8473300002 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for Microchip WV3EG232M64STSU403D4SG to view detailed technical specifications.
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