
The 1N5622US diode from Microsemi features a maximum operating temperature range of -65°C to 200°C and a maximum reverse voltage of 1kV. It has a maximum repetitive reverse voltage of 100V and a maximum reverse current of 500nA. The diode is designed for surface mount applications and has a reverse recovery time of 2us. It is not RoHS compliant.
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| Average Rectified Current | 1A |
| Package/Case | MELF |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Repetitive Reverse Voltage (Vrrm) | 100V |
| Max Reverse Current | 500nA |
| Max Reverse Voltage (DC) | 1kV |
| Mount | Surface Mount |
| Peak Non-Repetitive Surge Current | 30A |
| Radiation Hardening | Yes |
| Reverse Recovery Time | 2us |
| RoHS Compliant | No |
| RoHS | Not CompliantYes |
Download the complete datasheet for Microsemi 1N5622US to view detailed technical specifications.
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