The 1N5811US/TR is a surface mount Schottky diode from Microsemi, with a maximum operating temperature of 175°C and a minimum operating temperature of -65°C. It can handle a maximum reverse voltage of 150V and a maximum reverse current of 5uA. The diode has a peak non-repetitive surge current of 125A and a reverse recovery time of 30ns. It is also radiation hardened.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Microsemi 1N5811US/TR datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Average Rectified Current | 3A |
| Forward Current | 6A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Repetitive Reverse Voltage (Vrrm) | 150V |
| Max Reverse Current | 5uA |
| Max Reverse Voltage (DC) | 150V |
| Mount | Surface Mount |
| Peak Non-Repetitive Surge Current | 125A |
| Radiation Hardening | Yes |
| Reverse Recovery Time | 30ns |
| RoHS | Not CompliantYes |
Download the complete datasheet for Microsemi 1N5811US/TR to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
