The 1N5811US/TR is a surface mount Schottky diode from Microsemi, with a maximum operating temperature of 175°C and a minimum operating temperature of -65°C. It can handle a maximum reverse voltage of 150V and a maximum reverse current of 5uA. The diode has a peak non-repetitive surge current of 125A and a reverse recovery time of 30ns. It is also radiation hardened.
MountingSurface Mount
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Technical Specifications
Microsemi 1N5811US/TR technical specifications.
General
| Average Rectified Current | 3A |
| Forward Current | 6A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Repetitive Reverse Voltage (Vrrm) | 150V |
| Max Reverse Current | 5uA |
| Max Reverse Voltage (DC) | 150V |
| Mount | Surface Mount |
| Peak Non-Repetitive Surge Current | 125A |
| Radiation Hardening | Yes |
| Reverse Recovery Time | 30ns |
Compliance
| RoHS | Not CompliantYes |
Datasheet
Microsemi 1N5811US/TR Datasheet
Download the complete datasheet for Microsemi 1N5811US/TR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.