Microsemi
1N5817G
Diode, Schottky Barrier, Vr 20V, If 1A, Pkg CASE 59-10, Vf 0.45V, Tj +125degc, Cs 25A
MountingThrough Hole
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Technical Specifications
Microsemi 1N5817G technical specifications.
General
| Element Configuration | Single |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Mount | Through Hole |
| Peak Non-Repetitive Surge Current | 50A |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Microsemi 1N5817G Datasheet
Download the complete datasheet for Microsemi 1N5817G to view detailed technical specifications.
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