This bidirectional diode has a minimum breakdown voltage of 114V and a maximum operating temperature of 175°C. It can withstand a peak pulse current of 3A and a peak pulse power of 500W. The diode is available in a bulk packaging option and is suitable for use in through hole mounting applications.
Microsemi 1N6132 technical specifications.
| Direction | Bidirectional |
| Min Breakdown Voltage | 114V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Reverse Leakage Current | 1uA |
| Mount | Through Hole |
| Packaging | Bulk |
| Peak Pulse Current | 3A |
| Peak Pulse Power | 500W |
| Radiation Hardening | No |
| Reverse Standoff Voltage | 91.2V |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
No datasheet is available for this part.