The POWER MOS V device is a 1.2kV 26A power MOSFET packaged in a SOT-227-4 chassis mount package. It operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The device has a maximum power dissipation of 700W and a maximum Rds On of 400mR. It features a fall time of 20ns and a turn-off delay time of 90ns.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Microsemi APT12040JVFR datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 26A |
| Current Rating | 26A |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 18nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700W |
| Mount | Chassis Mount, Screw |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 400mR |
| RoHS Compliant | Yes |
| Series | POWER MOS V® |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 1.2kV |
| RoHS | Compliant |
Download the complete datasheet for Microsemi APT12040JVFR to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
