The APT20GF120BRDQ1G is a NPN transistor from Microsemi with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 36A. It is packaged in a TO-247-3 case and is designed for through-hole mounting. The device is rated for operation between -55°C and 150°C and has a maximum power dissipation of 200W. It is compliant with RoHS regulations and is available in rail or tube packaging.
PackageTO-247-3
Current Rating36A
MountingThrough Hole
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Technical Specifications
Microsemi APT20GF120BRDQ1G technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 3.2V |
| Current Rating | 36A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 36A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 1.2kV |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APT20GF120BRDQ1G Datasheet
Download the complete datasheet for Microsemi APT20GF120BRDQ1G to view detailed technical specifications.
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