The APT20M11JVFR is a high-power N-channel power MOSFET from Microsemi, featuring a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 700W and a continuous drain current of 175A. The device is packaged in a SOT-227-4 case and is suitable for chassis mount applications. It is also RoHS compliant and lead free.
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Microsemi APT20M11JVFR technical specifications.
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 175A |
| Current Rating | 175A |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.6mm |
| Input Capacitance | 21.6nF |
| Lead Free | Lead Free |
| Length | 38.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700W |
| Mount | Chassis Mount, Screw |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 700W |
| Radiation Hardening | No |
| Rds On Max | 11mR |
| RoHS Compliant | Yes |
| Series | POWER MOS V® |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 200V |
| Weight | 1.058219oz |
| Width | 25.4mm |
| RoHS | Compliant |
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