The APT75GN120JDQ3 is a single transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 124A. It has a maximum power dissipation of 379W and is designed for chassis mount applications. The transistor is packaged in a SOT-227-4 package and has a height of 9.6mm, length of 38.2mm, and width of 25.4mm. It operates over a temperature range of -55°C to 150°C and is not RoHS compliant.
PackageSOT-227-4
MountingChassis Mount, Screw
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Technical Specifications
Microsemi APT75GN120JDQ3 technical specifications.
General
| Package/Case | SOT-227-4 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 1.7V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.1V |
| Continuous Collector Current | 124A |
| Element Configuration | Single |
| Height | 9.6mm |
| Input | Standard |
| Input Capacitance | 4.8nF |
| Length | 38.2mm |
| Max Collector Current | 124A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 379W |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | No |
| Package Quantity | 1 |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Weight | 1.058219oz |
| Width | 25.4mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi APT75GN120JDQ3 Datasheet
Download the complete datasheet for Microsemi APT75GN120JDQ3 to view detailed technical specifications.
No datasheet is available for this part.