The APT75GN120JDQ3G is a high-power transistor from Microsemi, featuring a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 124A. It is packaged in a SOT-227 case and is designed for chassis mount applications. The transistor operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 379W. It is lead-free and available in rail or tube packaging.
Microsemi APT75GN120JDQ3G technical specifications.
| Package/Case | SOT-227 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 2.1V |
| Current Rating | 124A |
| Input | Standard |
| Input Capacitance | 4.8nF |
| Lead Free | Lead Free |
| Max Collector Current | 124A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 379W |
| Mount | Chassis Mount |
| NTC Thermistor | No |
| Packaging | Rail/Tube |
| DC Rated Voltage | 1.2kV |
| RoHS | Compliant |
Download the complete datasheet for Microsemi APT75GN120JDQ3G to view detailed technical specifications.
No datasheet is available for this part.