The APTGF330DA60D3G power transistor from Microsemi features a collector-emitter breakdown voltage of 600V and a maximum collector current of 460A. It operates within a temperature range of -40°C to 150°C and has a maximum power dissipation of 1.4kW. The device is mounted via screw terminals and is compliant with RoHS regulations.
MountingChassis Mount, Screw
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Technical Specifications
Microsemi APTGF330DA60D3G technical specifications.
General
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Input | Standard |
| Input Capacitance | 18nF |
| Max Collector Current | 460A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.4kW |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APTGF330DA60D3G Datasheet
Download the complete datasheet for Microsemi APTGF330DA60D3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.