The APTGT30SK170D1G is a NPN transistor from Microsemi with a collector-emitter breakdown voltage of 1.7kV and a maximum collector current of 45A. It is available in a D-package and is suitable for chassis mount applications. The transistor has a maximum power dissipation of 210W and operates within a temperature range of -40°C to 150°C. It is RoHS compliant and is packaged in bulk.
PackageD
MountingChassis Mount
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Technical Specifications
Microsemi APTGT30SK170D1G technical specifications.
General
| Package/Case | D |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector-emitter Voltage-Max | 2.4V |
| Input | Standard |
| Input Capacitance | 2.5nF |
| Max Collector Current | 45A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 210W |
| Mount | Chassis Mount |
| NTC Thermistor | No |
| Packaging | Bulk |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APTGT30SK170D1G Datasheet
Download the complete datasheet for Microsemi APTGT30SK170D1G to view detailed technical specifications.
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