The APTGT50DA170TG is a high-power darlington transistor module from Microsemi, featuring a collector-emitter breakdown voltage of 1.7kV and a maximum collector current of 75A. It operates within a temperature range of -40°C to 150°C and has a maximum power dissipation of 312W. The module is packaged in a bulk format and is compliant with RoHS regulations. An NTC thermistor is integrated into the module for temperature sensing.
PackageModule
MountingChassis Mount, Screw
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Technical Specifications
Microsemi APTGT50DA170TG technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector-emitter Voltage-Max | 2.4V |
| Input | Standard |
| Input Capacitance | 4.4nF |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 312W |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | Yes |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APTGT50DA170TG Datasheet
Download the complete datasheet for Microsemi APTGT50DA170TG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.