The APTM10HM19FT3G is a high-power N-CHANNEL power MOSFET from Microsemi, featuring a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. It has a maximum power dissipation of 208W and is packaged in a module format for screw mounting. The device has a continuous drain current of 70A and a drain to source voltage of 100V, with a drain to source resistance of 19mR. It is RoHS compliant and has a package quantity of 50 per bulk packaging.
Microsemi APTM10HM19FT3G technical specifications.
| Package/Case | Module |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Resistance | 19mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 125ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 11.5mm |
| Length | 73.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 208W |
| Mount | Screw |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 95ns |
| Turn-On Delay Time | 35ns |
| Width | 40.8mm |
| RoHS | Compliant |
No datasheet is available for this part.
