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Technical Specifications
Microsemi APTM10HM19FT3G technical specifications.
General
| Package/Case | Module |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Resistance | 19mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 125ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 11.5mm |
| Length | 73.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 208W |
| Mount | Screw |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 95ns |
| Turn-On Delay Time | 35ns |
| Width | 40.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APTM10HM19FT3G Datasheet
Download the complete datasheet for Microsemi APTM10HM19FT3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.