MOSFET N-CH 1200V 31A SP1
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Microsemi APTM120DA30T1G technical specifications.
| Package/Case | Module |
| Continuous Drain Current (ID) | 31A |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Fall Time | 90ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 14.56nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 657W |
| Mount | Chassis Mount, Screw |
| Packaging | Bulk |
| Radiation Hardening | No |
| Rds On Max | 360mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 315ns |
| Turn-On Delay Time | 100ns |
| RoHS | Compliant |