The APTM50DSKM65T3G is a 2 N-Channel FET module from Microsemi, rated for 500V drain to source voltage and 51A continuous drain current. It features a maximum power dissipation of 390W and a maximum operating temperature of 150°C. The module is packaged in a bulk package and is mounted via screws to a chassis. It is RoHS compliant and has a maximum Rds on resistance of 78mR.
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Microsemi APTM50DSKM65T3G technical specifications.
| Package/Case | Module |
| Continuous Drain Current (ID) | 51A |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 93ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 7nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 390W |
| Mount | Chassis Mount, Screw |
| Packaging | Bulk |
| Radiation Hardening | No |
| Rds On Max | 78mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 21ns |
| RoHS | Compliant |
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