The DLTS8C is a bidirectional diode with a minimum breakdown voltage of 8.5V and a maximum operating temperature of 150°C. It is packaged in a CDIP package and is mounted through a hole. The diode has a maximum reverse leakage current of 10uA and a peak pulse power of 500W. It is available in a rail or tube packaging configuration. The DLTS8C is not radiation hardened.
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Microsemi DLTS8C technical specifications.
| Package/Case | CDIP |
| Direction | Bidirectional |
| Min Breakdown Voltage | 8.5V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Reverse Leakage Current | 10uA |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Peak Pulse Current | 10A |
| Peak Pulse Power | 500W |
| Radiation Hardening | No |
| Reverse Standoff Voltage | 8V |
| RoHS | Compliant |
No datasheet is available for this part.
