The JAN1N5659A is a unidirectional diode with a minimum breakdown voltage of 114V and a maximum operating temperature of 175°C. It is available in a through hole package and is not radiation hardened. The diode has a maximum reverse leakage current of 5uA and a peak pulse power of 1.5kW. It is not RoHS compliant and is available in bulk packaging.
Microsemi JAN1N5659A technical specifications.
| Direction | Unidirectional |
| Min Breakdown Voltage | 114V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Reverse Leakage Current | 5uA |
| Mount | Through Hole |
| Packaging | Bulk |
| Peak Pulse Current | 9.1A |
| Peak Pulse Power | 1.5kW |
| Radiation Hardening | No |
| Reverse Standoff Voltage | 102V |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
No datasheet is available for this part.
