The JAN1N5660A diode from Microsemi features a unidirectional design with a minimum breakdown voltage of 124V. Operating within a temperature range of -65°C to 175°C, this component is suitable for high-temperature applications. The device is mounted through a hole, providing a secure connection. With a maximum reverse leakage current of 5uA, this diode ensures minimal current flow in reverse bias conditions. The peak pulse current and power ratings of 8.4A and 1.5kW, respectively, make it suitable for high-power applications.
Microsemi JAN1N5660A technical specifications.
| Direction | Unidirectional |
| Min Breakdown Voltage | 124V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Reverse Leakage Current | 5uA |
| Mount | Through Hole |
| Peak Pulse Current | 8.4A |
| Peak Pulse Power | 1.5kW |
| Reverse Standoff Voltage | 111V |
| RoHS Compliant | No |
| RoHS | Not Compliant |
No datasheet is available for this part.
