The JAN2N6213 is a single PNP transistor packaged in a TO-66 case, suitable for through hole mounting. It can withstand collector base voltages of up to 400V and collector emitter voltages of up to 350V. The device has a maximum collector current rating of 2A and a maximum power dissipation of 3W. Operating temperatures range from -55°C to 200°C.
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Microsemi JAN2N6213 technical specifications.
| Package/Case | TO-66 |
| Collector Base Voltage (VCBO) | 400V |
| Collector Emitter Voltage (VCEO) | 350V |
| Emitter Base Voltage (VEBO) | 6V |
| Max Collector Current | 2A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 3W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
Download the complete datasheet for Microsemi JAN2N6213 to view detailed technical specifications.
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