The JAN2N6251 is a single NPN transistor from Microsemi with a collector base voltage of 450V and a maximum collector current of 10A. It has a maximum power dissipation of 6W and operates within a temperature range of -55°C to 200°C. The device is packaged in a bulk format and is intended for through hole mounting. It does not meet radiation hardening or RoHS compliance standards.
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Microsemi JAN2N6251 technical specifications.
| Collector Base Voltage (VCBO) | 450V |
| Max Collector Current | 10A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 6W |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
No datasheet is available for this part.
