The JAN2N6300 is a 60V 8A NPN transistor from Microsemi, packaged in a TO-66-2 case and designed for through hole mounting. It features a collector emitter breakdown voltage of 60V and a collector emitter saturation voltage of 2V. The device is rated for operation between -55°C and 200°C and has a maximum power dissipation of 75W. The JAN2N6300 is not RoHS compliant and is part of the Military, MIL-PRF-19500/539 series.
PackageTO-66-2
MountingThrough Hole
PolarityNPN
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Technical Specifications
Microsemi JAN2N6300 technical specifications.
General
| Package/Case | TO-66-2 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 3V |
| Contact Plating | Tin, Lead |
| Emitter Base Voltage (VEBO) | 5V |
| Max Collector Current | 8A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Polarity | NPN |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/539 |
Compliance
| RoHS | Not Compliant |
Datasheet
Microsemi JAN2N6300 Datasheet
Download the complete datasheet for Microsemi JAN2N6300 to view detailed technical specifications.
No datasheet is available for this part.
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