The JAN2N6341 is a power transistor with a maximum collector current of 25A and collector base voltage of 180V. It can operate in temperatures ranging from -65°C to 175°C and has a maximum power dissipation of 200W. The device is available in a through-hole packaging style and is not radiation hardened. It is not compliant with RoHS regulations.
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Microsemi JAN2N6341 technical specifications.
| Collector Base Voltage (VCBO) | 180V |
| Max Collector Current | 25A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
