The JAN2N6350 is a TO-33 packaged NPN transistor from Microsemi with a maximum collector current of 5A and a maximum power dissipation of 1W. It has a collector-emitter breakdown voltage of 80V and a collector-emitter saturation voltage of 1.5V. The transistor is rated for operation between -65°C and 200°C and is available in bulk packaging.
PackageTO-33
MountingThrough Hole
PolarityNPN
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Technical Specifications
Microsemi JAN2N6350 technical specifications.
General
| Package/Case | TO-33 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1.5V |
| Emitter Base Voltage (VEBO) | 12V |
| Max Collector Current | 5A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Bulk |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/472 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N6350 Datasheet
Download the complete datasheet for Microsemi JAN2N6350 to view detailed technical specifications.
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