The JAN2N6351 is a single NPN transistor packaged in a TO-33 case for through hole mounting. It has a collector base voltage rating of 150V and a collector emitter saturation voltage of 2.5V. The transistor operates over a temperature range of -55°C to 125°C. It is not radiation hardened and is not RoHS compliant.
PackageTO-33
MountingThrough Hole
PolarityNPN
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Technical Specifications
Microsemi JAN2N6351 technical specifications.
General
| Package/Case | TO-33 |
| Collector Base Voltage (VCBO) | 150V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 150V |
| Emitter Base Voltage (VEBO) | 12V |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Bulk |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N6351 Datasheet
Download the complete datasheet for Microsemi JAN2N6351 to view detailed technical specifications.
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