The JAN2N6768 is a power MOSFET from Microsemi with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a continuous drain current of 14A and a drain to source voltage of 400V. The device is packaged in a TO-204AE case and is designed for through hole mounting. The MOSFET has a maximum power dissipation of 150W and a maximum Rds on of 400mR.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Microsemi JAN2N6768 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-204AE |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 130ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Bulk |
| Radiation Hardening | No |
| Rds On Max | 400mR |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/543 |
| Turn-Off Delay Time | 170ns |
| Turn-On Delay Time | 35ns |
| RoHS | Not CompliantNo |
Download the complete datasheet for Microsemi JAN2N6768 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
