The JANTX1N6119US is a bidirectional diode with a minimum breakdown voltage of 34.2V and a maximum operating temperature of 125°C. It is packaged in a MELF package and is suitable for surface mount applications. The diode has a maximum reverse leakage current of 1uA and a peak pulse power of 500W. It is not radiation hardened and is not RoHS compliant.
Microsemi JANTX1N6119US technical specifications.
| Package/Case | MELF |
| Direction | Bidirectional |
| Min Breakdown Voltage | 34.2V |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Reverse Leakage Current | 1uA |
| Mount | Surface Mount |
| Packaging | Tray |
| Peak Pulse Current | 10A |
| Peak Pulse Power | 500W |
| Radiation Hardening | No |
| Reverse Standoff Voltage | 27.4V |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
No datasheet is available for this part.
