The JANTX1N6130US is a bidirectional diode from Microsemi, packaged in a MELF case and mounted on the surface. It has a minimum breakdown voltage of 95V and a maximum operating temperature of 125°C. The diode can withstand a peak pulse current of 3.6A and a peak pulse power of 500W. It is not radiation hardened and is not RoHS compliant.
Microsemi JANTX1N6130US technical specifications.
| Package/Case | MELF |
| Direction | Bidirectional |
| Min Breakdown Voltage | 95V |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Reverse Leakage Current | 1uA |
| Mount | Surface Mount |
| Packaging | Tray |
| Peak Pulse Current | 3.6A |
| Peak Pulse Power | 500W |
| Radiation Hardening | No |
| Reverse Standoff Voltage | 76V |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
No datasheet is available for this part.
