The JANTX1N6131US is a bidirectional diode from Microsemi, packaged in a MELF case and available in a tray. It has a minimum breakdown voltage of 104.5V and a maximum reverse leakage current of 1uA. The diode can handle a peak pulse current of 3.3A and a peak pulse power of 500W. It operates over a temperature range of -55°C to 125°C.
PackageMELF
MountingSurface Mount
Quick Jump:
Technical Specifications
Microsemi JANTX1N6131US technical specifications.
General
| Package/Case | MELF |
| Direction | Bidirectional |
| Min Breakdown Voltage | 104.5V |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Reverse Leakage Current | 1uA |
| Mount | Surface Mount |
| Packaging | Tray |
| Peak Pulse Current | 3.3A |
| Peak Pulse Power | 500W |
| Radiation Hardening | No |
| Reverse Standoff Voltage | 86.6V |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTX1N6131US Datasheet
Download the complete datasheet for Microsemi JANTX1N6131US to view detailed technical specifications.
No datasheet is available for this part.