The JANTX2N1613 is a single NPN transistor from Microsemi with a collector base voltage of 75V and a maximum collector current of 500mA. It is packaged in a TO-39 case and is designed for through hole mounting. The transistor operates over a temperature range of -55°C to 125°C and has a maximum power dissipation of 800mW. It is not radiation hardened and is not RoHS compliant.
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Microsemi JANTX2N1613 technical specifications.
| Package/Case | TO-39 |
| Collector Base Voltage (VCBO) | 75V |
| Collector Emitter Voltage (VCEO) | 30V |
| Emitter Base Voltage (VEBO) | 7V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 800mW |
| Radiation Hardening | No |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
Download the complete datasheet for Microsemi JANTX2N1613 to view detailed technical specifications.
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