The JANTX2N2906AUB is a surface mount PNP transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 600mA. It has a maximum power dissipation of 500mW and operates over a temperature range of -65°C to 200°C. This transistor is not RoHS compliant and contains lead, making it suitable for military applications that require non-lead components.
Microsemi JANTX2N2906AUB technical specifications.
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1.6V |
| Emitter Base Voltage (VEBO) | 5V |
| Lead Free | Contains Lead |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 400mW |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/291 |
| RoHS | Not CompliantNo |
No datasheet is available for this part.
