The JANTX2N5010S is a TO-39 packaged NPN transistor with a collector base voltage of 500V and a maximum collector current of 200mA. It can handle a maximum power dissipation of 1W and operates over a temperature range of -65°C to 200°C. The transistor is mounted through a hole and is available in bulk packaging. It is not radiation hardened and is not RoHS compliant.
Microsemi JANTX2N5010S technical specifications.
| Package/Case | TO-39 |
| Collector Base Voltage (VCBO) | 500V |
| Emitter Base Voltage (VEBO) | 5V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
No datasheet is available for this part.
