The JANTX2N5666U3 is a surface mount NPN transistor with a collector emitter voltage rating of 200V and a maximum collector current of 5A. It has a maximum power dissipation of 1.5W and operates over a temperature range of -65°C to 200°C. The device is available in bulk packaging and is not radiation hardened or RoHS compliant.
PackageSMD/SMT
MountingSurface Mount
PolarityNPN
Power1.5W
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Technical Specifications
Microsemi JANTX2N5666U3 technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 250V |
| Collector Emitter Voltage (VCEO) | 200V |
| Emitter Base Voltage (VEBO) | 6V |
| Max Collector Current | 5A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTX2N5666U3 Datasheet
Download the complete datasheet for Microsemi JANTX2N5666U3 to view detailed technical specifications.
No datasheet is available for this part.