The JANTX2N6351 is a TO-33 packaged NPN transistor with a collector-emitter breakdown voltage of 150V and a maximum collector current of 5A. It operates within a temperature range of -65°C to 125°C and has a maximum power dissipation of 1W. This transistor is designed for through-hole mounting and is not RoHS compliant.
Microsemi JANTX2N6351 technical specifications.
| Package/Case | TO-33 |
| Collector Base Voltage (VCBO) | 150V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector-emitter Voltage-Max | 2.5V |
| Emitter Base Voltage (VEBO) | 12V |
| Max Collector Current | 5A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Bulk |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/472 |
| RoHS | Not CompliantNo |
No datasheet is available for this part.
