The JANTXV1N5553US diode from Microsemi features a maximum operating temperature of 175°C and a minimum operating temperature of -65°C. It can handle a maximum repetitive reverse voltage of 800V and a peak non-repetitive surge current of 100A. The device is designed for surface mount applications and is packaged in a tray. The JANTXV1N5553US is not radiation hardened and is not RoHS compliant.
MountingSurface Mount
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Technical Specifications
Microsemi JANTXV1N5553US technical specifications.
General
| Forward Current | 5A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Repetitive Reverse Voltage (Vrrm) | 800V |
| Max Reverse Current | 1uA |
| Mount | Surface Mount |
| Packaging | Tray |
| Peak Non-Repetitive Surge Current | 100A |
| Radiation Hardening | No |
| Reverse Recovery Time | 2000ns |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTXV1N5553US Datasheet
Download the complete datasheet for Microsemi JANTXV1N5553US to view detailed technical specifications.
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