The JANTXV1N6139US is a bidirectional diode with a minimum breakdown voltage of 7.13V and a maximum reverse leakage current of 300uA. It is designed for surface mount applications and can operate in temperatures ranging from -55°C to 125°C. The diode is packaged in a MELF package and is available in a tray packaging format.
PackageMELF
MountingSurface Mount
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Technical Specifications
Microsemi JANTXV1N6139US technical specifications.
General
| Package/Case | MELF |
| Direction | Bidirectional |
| Min Breakdown Voltage | 7.13V |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Reverse Leakage Current | 300uA |
| Mount | Surface Mount |
| Packaging | Tray |
| Peak Pulse Current | 133.9A |
| Peak Pulse Power | 1.5kW |
| Radiation Hardening | No |
| Reverse Standoff Voltage | 5.7V |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTXV1N6139US Datasheet
Download the complete datasheet for Microsemi JANTXV1N6139US to view detailed technical specifications.
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