The JANTXV2N3637UB is a surface mount bipolar junction transistor with a collector-emitter breakdown voltage of 175V and a maximum collector current of 1A. It has a maximum power dissipation of 1.5W and operates over a temperature range of -65°C to 200°C. The transistor is packaged in a small outline R-CDSO-N3 package and is available in bulk packaging.
PackageSMD/SMT
MountingSurface Mount
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Technical Specifications
Microsemi JANTXV2N3637UB technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 175V |
| Collector Emitter Breakdown Voltage | 175V |
| Collector-emitter Voltage-Max | 600mV |
| Max Collector Current | 1A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/357 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTXV2N3637UB Datasheet
Download the complete datasheet for Microsemi JANTXV2N3637UB to view detailed technical specifications.
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