The MRF5812GR1 is a surface mount transistor with a maximum collector current of 200mA and a maximum power dissipation of 1.25W. It features a collector base voltage of 30V and a collector emitter breakdown voltage of 15V. The device is packaged in a lead free SOIC package and is compliant with RoHS regulations. It operates over a temperature range of unspecified limits and has a gain of 15.5dB.
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| Package/Case | SOIC |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 15V |
| Gain | 15.5dB |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 200mA |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 5GHz |
| RoHS | Compliant |
