The SG2803J-DESC is an NPN transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. It is packaged in a CDIP and is suitable for through-hole mounting. The transistor operates over a temperature range of -55°C to 125°C and is lead-free. It is also radiation hardened.
PackageCDIP
MountingThrough Hole
PolarityNPN
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Technical Specifications
Microsemi SG2803J-DESC technical specifications.
General
| Package/Case | CDIP |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 1.6V |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 8 |
| Package Quantity | 1 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | Yes |
Compliance
| RoHS | CompliantYes |
Datasheet
Microsemi SG2803J-DESC Datasheet
Download the complete datasheet for Microsemi SG2803J-DESC to view detailed technical specifications.
No datasheet is available for this part.