The SMBG20HE3/TR7 diode from Microsemi features a clamping voltage of 35.8V and a leakage current of 1uA. It operates within a temperature range of -65°C to 150°C and is designed for surface mount applications. With a peak pulse current of 16.7A and a peak pulse power of 600W, this diode is suitable for high-power applications.
MountingSurface Mount
PolarityUnidirectional
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Technical Specifications
Microsemi SMBG20HE3/TR7 technical specifications.
General
| Clamping Voltage | 35.8V |
| Leakage Current | 1uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Peak Pulse Current | 16.7A |
| Peak Pulse Power | 600W |
| Polarity | Unidirectional |
| Reverse Breakdown Voltage | 22.2V |
| Reverse Standoff Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi SMBG20HE3/TR7 Datasheet
Download the complete datasheet for Microsemi SMBG20HE3/TR7 to view detailed technical specifications.
No datasheet is available for this part.