The TPR700 is a high-power transistor with a collector-emitter breakdown voltage of 65V and a maximum collector current of 55A. It operates at frequencies up to 1.09GHz and can dissipate a maximum power of 2.05kW. The transistor is available in a bulk package and is suitable for chassis mount applications using screws. It is not radiation hardened and is not RoHS compliant. The TPR700 has a gain of 6.7dB and can operate over a temperature range of -65°C to 200°C.
Frequency1.09GHz
MountingChassis Mount, Screw
PolarityNPN, PNP
Power700mW
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Technical Specifications
Microsemi TPR700 technical specifications.
General
| Collector Emitter Breakdown Voltage | 65V |
| DS Breakdown Voltage-Min | 65V |
| Gain | 6.7dB |
| Lead Free | Lead Free |
| Max Collector Current | 55A |
| Max Frequency | 1.09GHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2.05kW |
| Mount | Chassis Mount, Screw |
| Output Power | 700mW |
| Packaging | Bulk |
| Polarity | NPN, PNP |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Transition Frequency | 1.09GHz |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi TPR700 Datasheet
Download the complete datasheet for Microsemi TPR700 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.