The UES1003 is a diode with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It can handle a maximum repetitive reverse voltage of 150V and a peak non-repetitive surge current of 30A. The diode has a forward current rating of 1A and a reverse recovery time of 25ns. It is packaged in a bulk package and is not radiation hardened. The UES1003 is not RoHS compliant.
MountingThrough Hole
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Technical Specifications
Microsemi UES1003 technical specifications.
General
| Forward Current | 1A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Repetitive Reverse Voltage (Vrrm) | 150V |
| Max Reverse Current | 2uA |
| Mount | Through Hole |
| Packaging | Bulk |
| Peak Non-Repetitive Surge Current | 30A |
| Radiation Hardening | No |
| Reverse Recovery Time | 25ns |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi UES1003 Datasheet
Download the complete datasheet for Microsemi UES1003 to view detailed technical specifications.
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