The MwT-7F is a GaAs MESFET device featuring a 0.25 micron gate length and 250 micron gate width. It is designed for applications requiring high-gain and medium linear power in the 500 MHz to 26 GHz frequency range. It is effective for both wideband and narrow-band applications and features low phase noise suitable for oscillators. The chips are passivated with Silicon Nitride (SiN).
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Technical Specifications
Microwave Technology MwT-7F technical specifications.
General
| Frequency Range | 0.5 to 26GHz |
| Output Power (P1dB) @ 12 GHz | 21.0dBm |
| Small Signal Gain @ 12 GHz | 15.0dB |
| Gate Width | 250microns |
| Gate Length | 0.25microns |
| Noise Figure (NF) | 2.0dB |
| OIP3 | 32dBm |
| Power Added Efficiency (PAE) | 35% |
| Chip Size | 365 x 250microns |
| Gate Pads | 2count |
| Drain Pads | 2count |
Compliance
| Visual Screening | Visual Level 3 (military grade visual screening) |
Datasheet
Microwave Technology MwT-7F Datasheet
Download the complete datasheet for Microwave Technology MwT-7F to view detailed technical specifications.
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